Grupa Badawcza Epitaksji Związków Półprzewodnikowych
Publikacje
Emission and material gain spectra of polar compressive strained AlGaN quantum wells grown on virtual AlGaN substrates: Tuning emission wavelength and mixing TE and TM mode of light polarization
Marta Gladysiewicz, Mariusz Rudzinski, Detlef Hommel, Rober Kudrawiec
Semiconductor Science and Technology, 2018-05-30, DOI: 10.1088/1361-6641/aac2a3
Boron influence on bandgap and photoluminescence in BGaN grown on AlN
E. Zdanowicz, D. Iida, L. Pawlaczyk, J. Serafinczuk, R. Szukiewic, R. Kudrawiec, D. Hommel and K. Ohkawa
Journal of Applied Physics, 2020-04-29. DOI: 10.1063/1.5140413
Determination of dislocation density in GaN/sapphire layers using XRD measurements carried out from the edge of the sample
J. Serafinczuk, K. Moszak, Ł. Pawlaczyk, W. Olszewski, D. Pucicki, R. Kudrawiec, D. Hommel
Journal of Alloys and Compounds, 2020-06-05, DOI: 10.1016/j.jallcom.2020.153838
Anisotropic thermal conductivity of AlGaN/GaN superlattices
A. Filatova-Zalewska, Z. Litwicki, K. Moszak, W. Olszewski, K. Opołczyńska, D. Pucicki, J. Serafińczuk, D. Hommel, A. Jeżowski
Nanotechnology, 2020-11-26. DOI: 10.1088/1361-6528/abc5f2/meta
Bandgap engineering in III-nitrides with boron and group V elements: Toward applications in ultraviolet emitters
Robert Kudrawiec, and Detlef Hommel
Applied Physics Reviews, 2020-12-09. DOI: 10.1063/5.0025371
Bistable Fermi level pinning and surface photovoltage in GaN
M. Godzicki, K. Moszak, D. Hommel, G.R. Bell
Applied Surface Science, 2020-12-15. DOI: 10.1016/j.apsusc.2020.147416
Properties of Thin Film-Covered GaN(0001) Surfaces
M. Grodzicki
Materials Proceedings, 2020-05-13. DOI: 10.3390/CIWC2020-06833
Arsenic-l nduced Growth of Dodecagonal GaN Microrods with Stable a-Piane Walls
Paulina Ciechanowicz, Sandeep Gorantla, Paweł P. Michałowski, Ewelina Zdanowicz, Jean-Guy Rousset, Dana Hlushchenko, Krzysztof Adamczyk, Dominika Majchrzak, Robert Kudrawiec, and Detlef Hommel
Advanced Optical Materials. DOI: 10.1002/adom.202001348
XPS studies on the role of arsenic incorporated into Surface studies of physicochemical properties of As films on GaN(0001)
M. Grodzicki, J.-G. Rousset, P. Ciechanowicz, E. Piskorska-Hommel, Detlef Hommel
Vacuum ScienceDirect, 2019-09-01. https://doi.org/10.1016/j.vacuum.2019.05.043
Verification of threading dislocations density estimation methods suitable for efficient structural characterization of AlxGa1−xN/GaN heterostructures grown by MOVPE
K. Moszak, W. Olszewski, D. Pucicki, J. Serafinczuk, K. Opołczyńska, M. Rudziński, R. Kudrawiec, D.Hommel
Journal of Applied Physics, 2019-10-25. https://aip.scitation.org/doi/10.1063/1.5100140
The Influence of Oxygen and Carbon Contaminants on the Valence Band of p-GaN(0001)
D. Majchrzak, M. Grodzicki, P. Ciechanowicz, J.G. Rousset, E. Piskorska-Hommel and D. Hommel
ACTA PHYSICA POLONICA A, 2019-10-01. doi:10.12693/APhysPolA.136.585
As-related stability of the band gap temperature dependence in N-rich GaNAs
E. Zdanowicz, P. Ciechanowicz, K. Opolczyńska, D. Majchrzak, J.-G. Rousset, E. Piskorska-Hommel, M. Grodzicki, K. Komorowska, J. Serafinczuk, D. Hommel, R. Kudrawiec
Applied Physics Letters, 2019-08-29. https://doi.org/10.1063/1.5110245
Surface studies of physicochemical properties of As films on GaN(0001)
M. Grodzicki, J.-G. Rousset, P. Ciechanowicz, E. Piskorska-Hommel, Detlef Hommel
Applied Surface Science, 2019-11-01. https://doi.org/10.1016/j.apsusc.2019.07.006
Material Gain Engineering in Staggered Polar AlGaN/AlN Quantum Wells Dedicated for Deep UV Lasers
M. Gladysiewicz, R. Kudrawiec, D. Hommel
IEEE Journal of Selected topics in Quantum Electronics, 2019-11-13. doi: 10.1109/JSTQE.2019.2950802
Emission and material gain spectra of polar compressive strained AlGaN quantum wells grown on virtual AlGaN substrates: Tuning emission wavelength and mixing TE and TM mode of light polarization
Marta Gladysiewicz, Mariusz Rudzinski, Detlef Hommel, Rober Kudrawiec
Semiconductor Science and Technology, 2018-05-30. DOI: 10.1088/1361-6641/aac2a3/meta
As-related stability of the band gap temperature dependence in N-rich GaNAs
E. Zdanowicz, P. Ciechanowicz, K. Opolczyńska, D. Majchrzak, J.-G. Rousset, E. Piskorska-Hommel, M. Grodzicki, K. Komorowska, J. Serafinczuk, D. Hommel, R. Kudrawiec
Applied Physics Letters, 2019-08-29. https://doi.org/10.1063/1.5110245
